Panasonic 2SA1254
Silicon PNP epitaxial planer type Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –60 –30 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 0.45±0.05 2 1 2.5 2.5 EIAJ:SC–71 M Type Mold Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation voltage Base to emitter voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO hFE fT VCE(sat) VBE NF Zrb Cre * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz min typ 1.25±0.05 max – 0.1 –100 –10 4.1±0.2 High transition frequency fT.