Panasonic 2SA1309A
Silicon PNP Transistor
FEATURES
q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –50 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –50mA, IB = –5mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –100 –1 2.0±0.2 (Ta=25˚C) 0.7±0.1 marking +0.2 0.45–0.1 sABSOLUTE MAXIMUM RATINGS
15.6±0.5 High foward current transfer ratio hFE.