Panasonic 2SA1323
Silicon NPN epitaxial planer type Transistor
FEATURES
q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –20 –5 –60 –30 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitanse (Ta=25˚C) Symbol ICBO ICEO IEBO hFE * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz min typ max – 0.1 –100 –10 2.0±0.2 marking +0.2 0.45–0.1 sABSOLUTE MAXIMUM RATINGS
(Ta=25˚C) 15.6±0.5 Allowing supply with the radial taping.