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2SA1487 - Silicon PNP Transistor

Key Features

  • 0.45.
  • 0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCE =.
  • 60V, IB = 0 IC =.
  • 100µA, IE = 0 IC = 1mA, IB = 0 IE =.
  • 100µA, IC = 0 VCE =.
  • 5V, IC =.
  • 10mA.

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Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier 5.9± 0.2 Unit: mm 4.9± 0.2 q q High transition frequency fT. Small collector output capacitance Cob. +0.3 +0.2 2.54± 0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –85 –85 –4 –100 –50 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 0.45–0.1 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.