Panasonic 2SA1767
Silicon PNP epitaxial planer type Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 750 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 sFEATURES
0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A sELECTRICAL CHARACTERISTICS
Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE fT Cob * Conditions IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –300 –5 60 typ max Unit V V 150 – 0.6 50 7 V MHz pF VCE(sat) *h FE Rank classification Q 60 ~...