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2SA2009 Datasheet PDF

Panasonic 2SA2009

Silicon PNP epitaxial planer type Transistor

Part No. 2SA2009
Datasheet 2SA2009 Download
Manufacturer
Panasonic
Description Silicon PNP epitaxial planer type Transistor
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2SA2009 datasheet page 1 preview

FEATURES

● High collector to emitter voltage VCEO
● Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I

ABSOLUTE MAXIMUM RATINGS

Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −120 −120 −5 −50 −20 150 150 −55 to +150 Unit V V V mA mA mW °C °C 10˚ 1.3±0.1 2.0±0.2 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marking Symbol: AR I

ELECTRICAL CHARACTERISTICS

Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Noise voltage Transition frequency Note) *: Rank classification Rank hFE R 180 to 360 S 260 to 520 T 360 to 700 * Conditions VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 IC = −10 µA, IE...