Panasonic 2SA2010
Silicon PNP epitaxial planer type Transistor
| Part No. | 2SA2010 |
|---|---|
| Datasheet | 2SA2010 Download |
| Manufacturer |  Panasonic |
| Description | Silicon PNP epitaxial planer type Transistor |
| Buy | Stock & Price |
FEATURES
● Low collector to emitter saturation voltage VCE(sat) , large current capacitance● High-speed switching
● Mini type 3-pin package, allowing downsizing and thinning of the equipment.
● Complementary pair with 2SC5592 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 (0.65) I
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −15 − 15 −5 −10 − 2.5 600 150 −55 to +150 Unit V V V A A mW °C °C Marking Symbol: AS Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3. IELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emit...