Panasonic 2SA777
Silicon NPN Transistor
| Part No. | 2SA777 |
|---|---|
| Datasheet | 2SA777 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25˚C) 2.54± 0.15 0.7–0.2 +0.3 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7± 0.1 8.6± 0.2 sFEATURES
0.45–0.1 1.27 +0.2 sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 100MHz VCB = –10V, IE = 0, f = 1MHz min typ 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package max – 0.1 Unit µA V V V –80 –80 –5 90 50 100 – 0.2 – 0.85 120 11 20 – 0.4 –1.2 22...
