Panasonic 2SB0774
Silicon PNP epitaxial planar type Transistors
FEATURES
G High emitter to base voltage VEBO. G Protective diodes and resistances between emitter and base can be omitted. 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 13.5±0.5 IABSOLUTE MAXIMUM RATINGS
(Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A IELECTRICAL CHARACTERISTICS
(Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Coll