Panasonic 2SB0873
Silicon PNP epitaxial planar type Transistor
FEATURES
● Low collector-emitter saturation voltage VCE(sat)● Large collector current IC Unit: mm 5.9±0.2 4.9±0.2
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −30 −20 −7 −5 −10 1 150 −55 to +150 Unit V V 1 2 3 0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 V A A W °C °C 2.54±0.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Comm...