Panasonic 2SB0968
Silicon PNP epitaxial planar type Transistor
FEATURES
● Possible to solder radiation fin directly to printed circuit board● High collector-emitter voltage (Base open) VCEO
● Large collector power dissipation PC Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 2 1 4.6±0.1 3 0.75±0.1 2.3±0.1 1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0)
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (TC = 25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 10 150 −55 to +150 Unit V V V A A W °C °C 1 (1.8) 2 3 1.0±0.2 1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package Note) Self-supported type package is also prepared.●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff cu...