Panasonic 2SB1011
Silicon PNP triple diffusion planar type Transistor
| Part No. | 2SB1011 |
|---|---|
| Datasheet | 2SB1011 Download |
| Manufacturer |  Panasonic |
| Description | Silicon PNP triple diffusion planar type Transistor |
| Buy | Stock & Price |
FEATURES
● High collector-base voltage (Emitter open) VCBO● High collector-emitter voltage (Base open) VCEO
● Large collector power dissipation PC
● Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +150 Unit V V V 1 2 3 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 mA mA W °C °C●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Comm...
