Panasonic 2SB1070
Silicon PNP epitaxial planar type Transistor
FEATURES
● Low collector-emitter saturation voltage VCE(sat)● High-speed switching
● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 4.4±0.5
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 1.3 150 −55 to +150 °C °C V A A W V Unit V Collector-emitter voltage 2SB1070 (Base open) 2SB1070A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1070 2SB1070A 2SB1070 2SB1070A IEBO hFE1 hFE2 Base-emitter saturation voltage Collector-emitter satura...