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Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
12.6±0.3 7.2±0.3
Unit: mm
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
0˚ to 0.15˚
2.5±0.2
(1.0)
(1.0)
1.1±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1179 2SB1179A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 15 1.3 150 −55 to +150 °C °C V A A W V Unit V
0.75±0.1 0.4±0.1 2.3±0.
2SB1179 Datasheet
