2SB1220 Datasheet PDF

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV= 80dB, Rg = 100kΩ, Function = FLAT 200 4 150 –150 –5 130 450 –1 V MHz pF mV min typ max –1 Unit µA V V *h FE Rank classification Rank hFE Marking Symbol R 130 ~ 220 IR S 185 ~ 330 IS T 260 ~ 450 IT 0.15–0.05 +0.1 Parameter Symbol Ratings Unit 0.2 s

ABSOLUTE MAXIMUM RATINGS

(Ta=25˚C) 0.3–0 +0.1 1 Transistor PC — Ta 240 –100 Ta=25˚C –90 200 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –100 25˚C Ta=75˚C –80 2SB1220 IC — VCE –120 VCE=–5V IC — VBE Collector power dissipation PC (mW) Collector...