Panasonic 2SB1221
Silicon PNP epitaxial planer type Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 sFEATURES
0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob * Conditions VCB = –12V, IE = 0 IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –2 Unit µA V V –200 –5 60 220...