Panasonic 2SB1288
Silicon PNP epitaxial planer type Transistor
FEATURES
q q q sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –7 –10 –5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.7±0.1 0.7±0.2 8.0±0.2 0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA...