Panasonic 2SB1604
Silicon PNP Transistor
FEATURES
q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 15.0±0.3 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1604A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1604 2SB1604A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions...