Panasonic 2SB939
Power Transistors
| Part No. | 2SB939 |
|---|---|
| Datasheet | 2SB939 Download |
| Manufacturer |  Panasonic |
| Description | Power Transistors |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) 2SB0939 2SB0939A 2SB0939 2SB0939A IEBO hFE1 * hFE2 Base-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE(sat) VCE(sat) fT ton tstg tf ICBO VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VEB = −7 V,IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = −8 A IC = −4 A,IB = −8 mA IC = −4 A, IB = −8 mA VCE = −10 V, IC = −0.5 A, f = 1 MHz IC = −4 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.5 2 1 2 000 500 −2 −1.5 V V MHz µs µs µs Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 −100 −100 −2 10 000 mA µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part nu...
