Panasonic 2SC0829
Silicon NPN Transistor
| Part No. | 2SC0829 |
|---|---|
| Datasheet | 2SC0829 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.2 12.9±0.5 0.7±0.1●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V 0.45+–00..115 0.45+–00..115 e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 30 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 2.5+–00..26 2.5+–00..26 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package intenntinues follopwlianngefdoudrisPcroondtiuncuted type●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V M is iscon ainte Emitter-base voltage (Collector o...
