Panasonic 2SC1980
NPN Transistor
| Part No. | 2SC1980 |
|---|---|
| Datasheet | 2SC1980 Download |
| Manufacturer |  Panasonic |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High collector-emitter voltage (Base open) VCEO● Low noise voltage NV 0.7±0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 2.3±0.2 V le sta ntinu Collector current IC 20 mA a e cyc isco Peak collector current ICP 50 mA life d, d Collector power dissipation PC 250 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package in n es follopwlianngefdoudriscontin●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 120 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 120 V M is iscon a...
