Panasonic 2SC2671
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature *REB (Ta=25˚C) Ratings 15 14 2 80 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 2.54±0.15 1 2 3 0.45 –0.1 1.27 +0.2 Symbol VCBO VCER* VEBO IC PC Tj Tstg 13.5±0.5 Low noise figure NF. High gain. High transition frequency fT. 5.1±0.2 sFEATURES
0.45 –0.1 1.27 +0.2 2.3±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO–92 EIAJ:SC–43A = 1kΩ sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT* Cob* | S21e NF* |2 GUM* Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 40mA VCE = 8V, IC = 40mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f =...