Panasonic 2SC3077
Silicon NPN Transistor
FEATURES
q q q 0.65±0.15 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 sABSOLUTE MAXIMUM RATINGS
Parameter Symbol VCBO VCEO VEBO IC PC Tj Collector to base voltage 30 20 3 V V V Collector to emitter voltage Emitter to base voltage Collector current 20 mA Collector power dissipation Junction temperature Storage temperature 150 150 mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1T Tstg –55 ~ +150 sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current (Ta=25˚C) ue Symbol Conditions min typ 0 to 0.1 Ratings Unit 0.1 to 0.3 0.4±0.2 0.8 (Ta=25˚C) on ICBO IEBO hFE1 hFE2 fT Cob Crb PG NF e/ Forward current transfer ratio Transition frequency M Power gain ain Common emitter reverse transfer capacitance te Collector output capacitance Pl Noise figure d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n.