2SC3077 - Silicon NPN Transistor

Panasonic

Key Features

q q q 0.65±0.15 2.8.
0.3 +0.2 1.5.
0.05 +0.25 0.65±0.15 s Absolute Maximum Ratings Parameter Symbol VCBO VCEO VEBO IC PC Tj Collector to base voltage 30 20 3 V V V Collector to emitter voltage Emitter to base voltage Collector current 20 mA Collector power dissipation Junction temperature Storage temperature 150 150 mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.
236 EIAJ:SC.
59 Mini Type Package Marking symbol : 1T Tstg.
55 ~ +150 s Elec.

2SC3077 silicon npn transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SC3077
Manufacturer	Panasonic
File Size	233.37 KB
Description	Silicon NPN Transistor
Datasheet	2SC3077 Datasheet

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Full PDF Text Transcription (Reference)

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Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d s Features q q q 0.65±0.15 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 s Absolute Maximum Ratings Parameter Symbol VCBO VCEO VEBO IC PC Tj Collector to base voltage 30 20 3 V V V Collector to emitter voltage Emitter to base voltage Collector current 20 mA Collector power dissipation Junction temperature Storage temperature 150 150 mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1T Tstg –55 ~ +150 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (Ta=25˚C) ue Symbol Conditions min typ 0 to 0.1 Ratings Unit 0.1 to 0.3 0.4±0.2 0.