Panasonic 2SC3507
Silicon NPN Transistor
FEATURES
11.0±0.2 (3.2)● High-speed switching 21.0±0.5 15.0±0.2
● High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
● Satisfactory linearity of forward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e ) Collector-base voltage (Emitter open) VCBO 1 000 V c type Collector-emitter voltage (E-B short) VCES 1 000 V n d tage. ued Collector-emitter voltage (Base open) VCEO 800 V le s ntin Emitter-base voltage (Collector open) VEBO 7 V a e cyc isco Collector current IC 5 A n u t life ed, d Base current IB 3 A duc typ Peak collector current ICP 10 A te tin r Pro ued Collector power dissipation PC 80 W fou ontin Ta = 25°C 3.0 wing disc Junction temperature Tj 150 °C in n follo ned Storage temperature Tstg −55 to +150 °C a o includestype, pla●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C c ed ce Parameter Symbo...