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2SC3757 Datasheet PDF

Panasonic 2SC3757

Silicon NPN Transistor

Part No. 2SC3757
Datasheet 2SC3757 Download
Manufacturer
Panasonic
Description Silicon NPN Transistor
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2SC3757 datasheet page 1 preview

FEATURES

● Low collector-emitter saturation voltage VCE(sat)
● Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /
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ABSOLUTE MAXIMUM RATINGS

Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 40 V c e. d ty Collector-emitter voltage (E-B short) VCES 40 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 100 mA lifecy , dis Peak collector current ICP 300 mA n u duct typed Collector power dissipation PC 200 mW te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C Marking Symbol: 2Y 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdodiscon
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ELECTRICAL CHARACTERISTICS

Ta = 25°C ± 3°C a o lude e, p Parame...
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