Panasonic 2SC3795
Silicon NPN Transistor
FEATURES
10.0±0.2 4.2±0.2● High-speed switching 5.5±0.2 2.7±0.2
● High collector to base voltage VCBO
● Low collector to emitter saturation voltage VCE(sat)
● Full-pack package which can be installed to the heat sink with one screw I
ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Symbol Rating Unit / Collector to base 2SC3795 VCBO 14.0±0.5 Solder Dip (4.0) 800 V voltage 2SC3795A 900 e e) Collector to 2SC3795 VCES 800 V c typ emitter voltage 2SC3795A 900 n d tage. ued Collector to emitter voltage VCEO 500 V le s ntin Emitter to base voltage VEBO 8 V a e cyc isco Peak collector current ICP 10 A life d, d Collector current IC 5 A n u duct type Base current IB 3 A te tin Pro ed Collector power TC = 25°C PC 40 W ur tinu dissipation Ta = 25°C 2 g fo con Junction temperature Tj 150 °C win dis Storage temperature Tstg −55 to +150 °C in n follo ned IELECTRICAL CHARACTERISTICS
TC = 25°C des , pla Parameter Symbol Conditions a o inclu type Collector cutoff c ed ce current 2SC3795 2SC3795A tinu na...