Panasonic 2SC3979
Silicon NPN Transistor
FEATURES
10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2● High-speed switching
● High collector-base voltage (Emitter open) VCBO φ 3.1±0.1
● Wide safe operation area
● Satisfactory linearity of forward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e e) Collector-base voltage 2SC3979 VCBO 900 V c typ (Emitter open) 2SC3979A 1 000 n d stage. tinued Collector-emitter voltage 2SC3979 VCES 900 V le on (E-B short) 2SC3979A 1 000 a elifecyc disc Collector-emitter voltage (Base open) VCEO 800 V n u ct ped, Emitter-base voltage (Collector open) VEBO 7 V rodu d ty Base current IB 1 A te tin ur P tinue Collector current IC 3 A g fo con Peak collector current ICP 5 A in n llowin d dis Collector power PC 40 W s fo lane dissipation Ta = 25°C 2.0 a o lude e, p Junction temperature Tj 150 °C inc typ Storage temperature Tstg...