Panasonic 2SC4004
Silicon NPN Transistor
FEATURES
10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2● High-speed switching
● High collector-base voltage (Emitter open) VCBO φ 3.1±0.1
● Wide safe operation area
● Satisfactory linearity of forward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 900 V c type Collector-emitter voltage (E-B short) VCES 900 V n d tage. ued Collector-emitter voltage (Base open) VCEO 800 V le s ontin Emitter-base voltage (Collector open) VEBO 7 V a elifecyc disc Base current IB 0.3 A n u t ed, Collector current IC 1 A roduc d typ Peak collector current ICP 2 A te tin ur P tinue Collector power dissipation PC 30 W fo on Ta = 25°C 2.0 wing disc Junction temperature Tj 150 °C in n follo ned Storage temperature Tstg −55 to +150 °C a o includestype, pla●
ELECTRICAL CHARACTERISTICS
TC =...