Panasonic 2SC4212
Silicon NPN triple diffusion planar type Transistor
FEATURES
IABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 350 300 7.5 400 200 1.2 *1 5 Junction temperature Storage temperature *2 Unit V V V mA mA W °C °C 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 1 : Emitter 2 : Collector 3 : Base TO-126B Package 150 −55 to +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink IELECTRICAL CHARACTERISTICS
TC = 25°C Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 IC = 100 µA, IE = 0 IC = 5 mA, IB = 0 IE = 100 µA, I...