Panasonic 2SC4391
Silicon NPN Transistor
FEATURES
● Low collector-emitter saturation voltage VCE(sat) 0.65 max. (1.0) 14.5±0.5● High collector-emitter voltage (Base open) VCEO
● Allowing supply with the radial taping
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 V le sta ntinu Collector current IC 1 A a e cyc isco Peak collector current ICP 1.5 A life d, d Collector power dissipation * PC 1 W n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C four ontin Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 0.45+–00..0150 2.5±0.5 1.05±0.05 2.5±0.5 0.45+–00..0150 123 1: Emitter 2: Collector 3: Base MT-2-A1 Package in n es follopwliannged disc●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min c ed in ce ty Collector-base volta...