Panasonic 2SC4420
Silicon NPN Transistor
FEATURES
(0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2● High-speed switching
● High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
● Wide safe operation area
● Satisfactory linearity of forward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 /
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 16.2±0.5 (3.5) Solder Dip 1.1±0.1 0.6±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 900 V c e. d ty Collector-emitter voltage (E-B short) VCES 900 V n d stag tinue Collector-emitter voltage (Base open) VCEO 800 V a e cle con Emitter-base voltage (Collector open) VEBO 7 V lifecy , dis Base current IB 1 A n u duct typed Collector current IC 3 A te tin Pro ed Peak collector current ICP 5 A ur tinu Collector power dissipation PC 70 W ing fo iscon Ta = 25°C 3.0 in n follow ed d Junction temperature Tj 150 °C s lan Storage temperature Tstg −55 to +150 °C 5.45±0.3 10.9±0.5 123 1: Base 2:...