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2SC4655J - Silicon NPN Transistor

Key Features

  • s.
  • Optimum for RF amplification, oscillation, mixing, and IF of 1.60+.
  • 00..0035 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+.
  • 00..0013 (0.375) 0.85.
  • +00..0035 1.60±0.05 5˚ FM/SAM radios.
  • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.50)(0.50) (0.80) /.
  • Absolute Maximum Ratings Ta = 25°C 5˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 3.

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Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification, oscillation, mixing, and IF of 1.60+–00..0035 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+–00..0013 (0.375) 0.85–+00..0035 1.60±0.05 5˚ FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.50)(0.50) (0.80) / ■ Absolute Maximum Ratings Ta = 25°C 5˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 0 to 0.02 0.70–+00..0035 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V 0.10 max.