2SC4782 Datasheet PDF

FEATURES

q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCES VEBO ICP IC PC Tj Tstg 25 20 5 300 200 200 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : DV s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE * Conditions VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Refer to the measurment circuit min typ 0 to 0.1 Parameter Symbol Ratings Unit 0.1 to 0.3 0.4±0.2 0.8 (Ta=25˚C) 1.1 –0.1 s

ABSOLUTE MAXIMUM RATINGS

max 0.1 0.1 0.16 –0.06 +0.2 +0.1 0.4 –0.05 High-speed switching.