Panasonic 2SC5026
NPN Transistor
FEATURES
2.5±0.1 3˚ 4.0–+00..2205● Low collector-emitter saturation voltage VCE(sat)
● High collector-emitter voltage (Base open) VCEO
● Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0–+00..21 0.4±0.04 /
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C e pe) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. 45˚ 3.0±0.15 c e. d ty Collector-base voltage (Emitter open) VCBO 80 V n d stag tinue Collector-emitter voltage (Base open) VCEO 80 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 1 A n u duct typed Peak collector current ICP 1.5 A te tin Pro ed Collector power dissipation * PC 1 W four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C Marking Symbol: 2A 1: Base 2: Collector 3: Emitter MiniP3-F1 Package in n follow ed d Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7...