Panasonic 2SC5243
Silicon NPN Transistor
FEATURES
q q q 1.5 1.5 Solder Dip sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature *Non-repetitive 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 1700 1700 6 15 30 10 200 3.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2.7±0.3 Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package peak sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0...