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2SC5295J - Silicon NPN Transistor

Key Features

  • 3 (0.375) 0.85.
  • +00..0035 1.60±0.05 5˚.
  • High transition frequency fT.
  • Low collector output capacitance (Common base, input open cir- 12 (0.80) cuited) Cob.
  • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) 5˚ /.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0 to 0.02 0.70.
  • +00..0035 V.

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Transistors 2SC5295J Silicon NPN epitaxial planar type 0.80±0.05 For 2 GHz band low-noise amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • High transition frequency fT • Low collector output capacitance (Common base, input open cir- 12 (0.80) cuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) 5˚ / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0 to 0.02 0.70–+00..0035 V 0.10 max. c e.