Panasonic 2SC5418
Silicon NPN Transistor
FEATURES
φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / sABSOLUTE MAXIMUM RATINGS
(TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stage. tinued Collector to emitter voltage VCES 3.3±0.3 0.7±0.1 1700 V le n VCEO 600 V a elifecyc disco Emitter to base voltage VEBO 2.0 5.5±0.3 5 V n u t ed, Peak collector current ICP 30 A roduc d typ Collector current IC 20 A te tin urP tinue Basecurrent IB 10 A fo on Collector power TC=25°C wing disc dissipation Ta=25°C PC 100 W 3.5 in n follo ned Junction temperature des , pla Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 5.45±0.3 5° 5.45±0.3 0.7±0.1 123 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package a co s tinued incalnuce typeELECTRICAL CHARACTERISTICS
(TC=25˚C) M is con inten Parameter Symbol c...