Panasonic 2SC5440
NPN Transistor
FEATURES
15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5● High breakdown voltage, and high reliability through the use of a glass passivation layer
● High-speed switching
● Wide safe operation area (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 /
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 18.6±0.5 (2.0) Solder Dip 5.45±0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 500 V c e. d ty Collector-emitter voltage (E-B short) VCES 1 500 3.3±0.3 5.5±0.3 V n d stag tinue Collector-emitter voltage (Base open) VCEO 600 (2.0) V a e cle con Emitter-base voltage (Collector open) VEBO 7 V lifecy , dis Base current IB 7.5 A n u duct typed Collector current IC 15 A te tin Pro ed Peak collector current * ICP 25 A ur tinu Collector power dissipation PC 60 W ing fo iscon Ta = 25°C 3.0 in n follow ed d Junction temperature Tj 150 °C s lan Storage temperature Tstg −55 to +150 °C a o clude pe, p Note) *: Non-repetitive peak collector current M i...