Panasonic 2SC5457
NPN Transistor
FEATURES
0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / sABSOLUTE MAXIMUM RATINGS
(TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V 13.3±0.3 n u t ed, Peak collector current ICP 6 A 6.0 roduc d typ Collector current IC 3 A te tin urP tinue Basecurrent IB 1.2 A 2.3±0.1 g fo con Collector power TC=25°C win dis dissipation Ta=25°C PC 30 W 1.0 in n follo ned Junction temperature a o ludes e, pla Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C c s tinued incance typELECTRICAL CHARACTERISTICS
(TC=25˚C) M is con inten Parameter Symbol Conditions /Dis , ma Collector cutoff cu...