High gain of 8.2 dB and low noise of 1.8 dB at 3 V
0.23+.
00..0025
12
0.15 min.
Optimum for RF amplification of a portable telephone and pager
(0.40) (0.40) 0.80±0.05 1.20±0.05
I Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
/ Collector to base voltage
VCBO
9
V
0 to 0.01 0.52±0.03
0.15 max. MaDinistecnoanntincueed ICECCJSCEFFNCGuootmmoooooEoaonrrlilllliriwwiclnllllslttaeeeeeetettaagciceb.
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Transistor
2SC5557
Silicon NPN epitaxial planar type
For low-noise RF amplifier
0.33+–00..0025
Unit: mm
0.10+–00..0025
3
0.15 min.
0.80±0.05 1.20±0.05
I Features
• High transition frequency fT
5˚
• High gain of 8.2 dB and low noise of 1.8 dB at 3 V
0.23+–00..0025
12
0.15 min.
• Optimum for RF amplification of a portable telephone and pager
(0.40) (0.40) 0.80±0.05 1.20±0.05
I Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
/ Collector to base voltage
VCBO
9
V
0 to 0.01 0.52±0.03
0.15 max.
2SC5557 Datasheet
