Panasonic 2SC5809
Silicon NPN Transistor
| Part No. | 2SC5809 |
|---|---|
| Datasheet | 2SC5809 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High-speed switching (Fall time tf is short)● High collector-base voltage (Emitter open) VCBO
● Low collector-emitter saturation voltage VCE(sat)
● TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 −55 to +150 °C °C Unit V V V A A W 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal Connection C B E●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current...
