Panasonic 2SC5813
Silicon NPN Transistor
| Part No. | 2SC5813 |
|---|---|
| Datasheet | 2SC5813 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage VCE(sat)● Mini type package, allowing downsizing of the equipment and 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 automatic insertion through the tape packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 80 V c e. d ty Collector-emitter voltage (Base open) VCEO 80 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 1.5 A lifecy , dis Peak collector current ICP 3 A n u duct typed Collector power dissipation * PC 600 mW te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C ing fo iscon Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm Marking Symbol: 5H 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n es follopwlaned d● Electrical Charact...
