Panasonic 2SC5829
Silicon NPN epitaxial planar type Transistor
FEATURES
● Allowing the small current and low voltage operation● High transition frequency fT
● Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) 0.60±0.05 3 2 Unit: mm 1 1.00±0.05 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 −55 to +150 Unit V V V mA mW °C °C 0.50±0.05
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: X●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open c...