Panasonic 2SC5848
Silicon NPN Transistor
FEATURES
3 2 0.60±0.05 High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package 1 1.00±0.05 0.39+−00..0013 0.15±0.05 0.05±0.03 0.35±0.01 Package: 0.6 mm × 1.0 mm (hight 0.39 mm) / ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 0.50±0.05 0.25±0.05 0.25±0.05 1 Parameter e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base voltage (Collector open) le s ontin Collector current a elifecyc disc Peak collector current n u t ed, Collector power dissipation roduc d typ Junction temperature te tin ur P tinue Storagetemperature Symbol Rating Unit VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW Tj 125 °C Tstg –55 to +125 °C 3 2 0.65±0.01 0.05±0.03 1: Base 2: Emitter 3: Collector Marking Symbol : 3E ML3-N2 Package in n followingefdodiscon ELECTRICAL CHARACTERISTICS
Ta = 25°C±3°C es plan Parameter Symbol Conditions Min Typ Max Unit a o includ type...