Panasonic 2SC5863
Silicon NPN Transistor
| Part No. | 2SC5863 |
|---|---|
| Datasheet | 2SC5863 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
5˚● High collector-emitter voltage (Base open) VCEO 1 2 (0.65)
● High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+–00..0250 /
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 300 1.1–+00..12 1.1–+00..13 V c type Collector-emitter voltage (Base open) VCEO 300 0 to 0.1 V n d tage. ued Emitter-base voltage (Collector open) VEBO 7 V le s ontin Collector current IC 70 mA a elifecyc disc Peak collector current ICP 100 mA n u t ed, Collector power dissipation PC 200 mW roduc d typ Junction temperature Tj 150 °C te tin ur P tinue Storage temperature Tstg −55 to +150 °C Marking Symbol: 7H 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n es follopwlianngefdodiscon●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 300 tinu nan Emitter-base voltage (Collector open) VEBO...
