Panasonic 2SC5926
Silicon NPN triple diffusion planar type Transistor
FEATURES
● High forward current transfer ratio hFE which has satisfactory linearity.● Low collector-emitter saturation voltage VCE(sat)
● Allowing supply with the radial taping 10.0±0.2 1.0±0.2 90˚ 2.5±0.1 5.0±0.1 13.0±0.2 1.2±0.1 1.48±0.2 C 1.0 2.25±0.2
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 15 2.0 150 −55 to +150 °C °C Unit V V V A A W 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 2.5±0.2 2.5±0.2 1 2 3 0.55±0.1 1: Base 2: Collector 3: Emitter MT-4-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Col...