Panasonic 2SC5935
Silicon NPN Transistor
FEATURES
φ 3.2±0.1 15.0±0.5● Satisfactory linearity of forward current transfer ratio hFE
● Dielectric breakdown voltage of the package: 5 kV
● Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 /
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 0.8±0.1 0.55±0.15 e Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip c type) Collector-base voltage (Emitter open) VCBO 200 V n d ge. ed Collector-emitter voltage (Base open) VCEO 180 V sta tinu Emitter-base voltage (Collector open) VEBO 6 V a e cycle iscon Collector current IC 2 A life d, d Peak collector current ICP 3 A n u duct type Collector power PC 25 W te tin Pro ued dissipation Ta = 25°C 2.0 four ntin Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C ain oncludes fpoell,opwlaned d●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C c ed in ce ty Parameter Symbol Conditions tinu nan Collector-base voltage (Emitter open) M is con inte Collector-emitter voltage (Base open)...