Panasonic 2SC5950
Silicon NPN Transistor
FEATURES
3 1.25±0.10 2.1±0.1 5° High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 ABSOLUTE MAXIMUM RATINGS
Ta = 25°C / Parameter Symbol Rating Unit (0.65) (0.65) 1.3±0.1 2.0±0.2 Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c . typ Emitter-base voltage (Collector open) n d stage tinued Collector current le on Peak collector current a elifecyc , disc Collector power dissipation n u ct ped Junction temperature te tin Produ ed ty Storagetemperature VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 150 mW Tj 150 °C Tstg −55 to +150 °C 0 to 0.1 0.9±0.1 0.9–+00..12 0.2±0.1 10° 1: Base 2: Emitter 3: Collector Marking Symbol: 7M SMini3-G1 Package g four continu ELECTRICAL CHARACTERISTICS
Ta = 25°C±3°C in n llowin d dis Parameter Symbol Conditions Min Typ Max s fo lane Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 a o lude e, p Colle...