Panasonic 2SD0958
Silicon NPN Transistor
| Part No. | 2SD0958 |
|---|---|
| Datasheet | 2SD0958 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C (0.85) 0.55±0.1 2.4±0.2 0.45±0.05 1: Base 2: Collector 3: Emitter M-A1 Package●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cut-off current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT NV Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VCE = 5 V, IC = 2 mA IC = 20 mA, IB = 2 mA VCB = 5 V, IE = −2 mA, f = 200 MHz VCE = 40 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 200 150 180 Min 120 120 7 100 1 700 0.6 Typ Max Unit V V V nA µA V MHz mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE R 180 to 360 S 260 to 520 T 360 to 700 Note) The part number in the parenthesis shows conventional part number.
