Panasonic 2SD1030
Silicon NPN Transistor
| Part No. | 2SD1030 |
|---|---|
| Datasheet | 2SD1030 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
q q q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 +0.2 1.1 –0.1 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 50 40 15 100 50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1Z sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 max 100 1 0.16 –0.06 High foward current transfer ratio hFE.